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GaN Amp Drives C-IED Systems

Nov. 4, 2010

Model TGA2576 is a gallium nitride (GaN) power amplifier developed by TriQuint Semiconductor for C-IED and electronic-warfare (EW) applications. It provides 30 W saturated output power in the 2.5-to-6.0-GHz range with typical small-signal gain of 25 dB and power-added efficiency (PAE) of 30 percent. According to Grant Wilcox, TriQuint Marketing Manager, "TriQuint's gallium nitride portfolio offers the performance and dependability that defense and aerospace customers demand. Our new TGA2576 is ideal for counter-IED systems and other EW applications. TriQuint leads in both GaN and GaAs technologies, so you can depend on us for design assistance, service and products that support mission success."

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.