GaN Transistor Delivers 75 W

Nov. 11, 2010
Model RF3932 is an unmatched gallium nitride (GaN) power transistor from RF Micro Devices that can provide 75 W output power when impedance matched to applications from DC to 3 GHz. The transistor features peak efficiency of better than 65 percent and is ...

Model RF3932 is an unmatched gallium nitride (GaN) power transistor from RF Micro Devices that can provide 75 W output power when impedance matched to applications from DC to 3 GHz. The transistor features peak efficiency of better than 65 percent and is housed in a hermetic, flanged ceramic two-leaded package. According to Bob Van Buskirk, President of RFMD's Multi-Market Products Group (MPG), "We look forward to introducing additional GaN devices that feature superior power density, high efficiency, rugged dependability, and green' power consumption advantages." The 48-V model RF3932 transistor is suitable for commercial wireless and military radar applications.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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