GaN Transistor Delivers 75 W

Model RF3932 is an unmatched gallium nitride (GaN) power transistor from RF Micro Devices that can provide 75 W output power when impedance matched to applications from DC to 3 GHz. The transistor features peak efficiency of better than 65 percent and is housed in a hermetic, flanged ceramic two-leaded package. According to Bob Van Buskirk, President of RFMD's Multi-Market Products Group (MPG), "We look forward to introducing additional GaN devices that feature superior power density, high efficiency, rugged dependability, and green' power consumption advantages." The 48-V model RF3932 transistor is suitable for commercial wireless and military radar applications.