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GaN-on-SiC HEMT Powers 6 GHz

Dec. 16, 2011
Model T1G6001528-Q3 is a packaged high-electron-mobility transistor (HEMT) fabricated with a gallium nitride (GaN) on silicon-carbide (SiC) 0.25-m semiconductor process. It can serve applications from DC to 6 GHz and is suitable for ...
Model T1G6001528-Q3 is a packaged high-electron-mobility transistor (HEMT) fabricated with a gallium nitride (GaN) on silicon-carbide (SiC) 0.25-m semiconductor process. It can serve applications from DC to 6 GHz and is suitable for commercial wireless communications as well as military radar and electronic-warfare (EW) systems. The packaged transistor can deliver as much as 18 W output power at 6 GHz with as much as 60% power-added efficiency (PAE) at 6 GHz. It is designed for operation from a +28-VDC supply and will deliver rated output power into a 10:1 VSWR.

TRIQUINT SEMICONDUCTOR, INC.
2300 NE Brookwood Parkway
Hillsboro, OR 97124
(503) 615-9000
FAX: (503) 615- 8900
www.triquint.com

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