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LDMOS Transistor Eyes L-Band Applications

July 23, 2009

With the debut of the ILD1011M550HV, Integra Technologies, Inc. is expanding its family of high-power LDMOS transistors for L-band avionics applications. The ILD1011M550HV offers output power starting at 550 W with 16.5 dB nominal gain from 1030 to 1090 ...

Nancy Friedrich

Related To: Microwaves & RF

Using a complete gold metal system--die, wire bond, and package--the ILD1011M550HV promises to deliver maximum reliability in pulsed avionics systems. The transistor is internally pre-matched for ease of use and 100-percent production tested in a broadband RF test fixture. With this product debut, the company also has announced the imminent arrival or high-power, pre-matched devices for DME and TACAN applications.

About the Author

Nancy Friedrich | RF Product Marketing Manager for Aerospace Defense, Keysight Technologies

Nancy Friedrich is RF Product Marketing Manager for Aerospace Defense at Keysight Technologies. Nancy Friedrich started a career in engineering media about two decades ago with a stint editing copy and writing news for Electronic Design. A few years later, she began writing full time as technology editor at Wireless Systems Design. In 2005, Nancy was named editor-in-chief of Microwaves & RF, a position she held (along with other positions as group content head) until 2018. Nancy then moved to a position at UBM, where she was editor-in-chief of Design News and content director for tradeshows including DesignCon, ESC, and the Smart Manufacturing shows.