Model RF5632 is a power amplifier (PA) developed expressly by RF Micro Devices for WiMAX systems operating from 2.3 to 2.7 GHz. It is suitable for customer premises equipment (CPE), gateways, and access points, as well as for Long Term Evolution (LTE) cellular wireless infrastructure equipment and WiFi-based wireless high-definition interface (WHDI) for wireless video distribution networks. The three-stage power amplifier integrated circuit (IC) offers 34-dB gain with +28-dBm output power and error-vector-magnitude (EVM) performance of 2.5 percent over the frequency range from 2.3 to 2.7 GHz. The bias can be controlled to accommodate a 22-dB gain step for enhanced dynamic range. The InGaP heterojunction-bipolar-transistor (HBT) PA operates on +5 VDC and is supplied in a 4 x 4 mm QFN package.