Terminations Trim PIM to 2.7 GHz
A line of terminations with low passive intermodulation (PIM) has been developed for cellular and wireless applications from 380 MHz to 2.7 GHz. The terminations, which are now available with 7/16 DIN, 4.3/10.0 DIN, and Type-N connectors, minimize typical PIM levels to between -160 and -165 dBc when tested with two 20-W tones at +25°C. The product line includes models with power ratings of 10, 30, 50, and 100 W usable at operating temperatures to +85°C.
MECA Electronics, Denville, NJ 07834; (866) 444-6322, e-mail: [email protected], www.e-MECA.com
MEMS Foundry Offers Through-Silicon Vias
The capability to fabricate through-silicon vias (TSVs) has been added to a comprehensive list of microelectromechanical-systems (MEMS) foundry services. The 30,000-ft. foundry, which processes wafers as large as 6 in. for high-volume production, produces surface and bulk MEMS devices as well as electrostatic and electromagnetic (EM) actuators. The conductor-filled TSVs exhibit DC resistance of less than 0.01Ω per via and insertion loss of only 0.01 dB at 6 GHz. The TSVs can be formed with different hole diameters and depths, such as 15-µm diameter with 50-µm depth and 50-µm diameter with 250-µm depth. The foundry also offers hermetic wafer-level packaging (WLP) of customer-designed components.
Innovative Micro Technology, MEMS Technology Center, 75 Robin Hill Rd., Santa Barbara, CA 93117; (805) 681-2852, www.imtmems.com
Transmit-Receiver Module Fits Cellular Handsets
Flexible cellular transceiver module SKY77927-11 SkyLITE is designed for quad-band GSM/GPRS/EDGE handsets. Its coverage extends to 850/900-MHz bands, 1,800/1,900-MHz bands, and more, including Long-Term-Evolution (LTE) bands 34 and 39. The transceiver measures just 5.5 x 5.5 x 0.8 mm in a 44-pin multichip-module (MCM) configuration complete with power amplification and switching for minimum complexity in designing a cellular telephone circuit board. Transmit harmonics are less than -40 dBc, while power amplifier efficiency is 35% or better.
Skyworks Solutions, 20 Sylvan St., Woburn, MA 01801; (781) 376-3000, e-mail: [email protected], www.skyworksinc.com
OCSO Achieves Low Noise at 3200 MHz
Model LNO 3200 B3 is a low-noise oscillator with integral multiplier that offers stable output signals at 3200 MHz. The unit includes a surface-acoustic-wave (SAW) oscillator and x10 multiplier to reach the final 3,200-MHz frequency. The oven-controlled SAW oscillator (OCSO) can be equipped with an optional phase-lock loop (PLL) for locking to an external 10-MHz reference source. The 3,200-MHz oscillator provides sinewave outputs at +5 dBm nominal output power. The frequency is calibrated at the factory within +/-0.2 ppm of the final 3,200 MHz. The OCSO achieves typical phase noise of -130 dBc/Hz offset 1 kHz from the carrier and -154 dBc/Hz offset 10 kHz from the carrier, with a noise floor of -157 dBc/Hz. It measures 120.7 x 76.2 x 23.3 mm and runs on supply +10 V dc with a control voltage range of +2 to +8 V dc. The source has an operating temperature range of 0 to +50°C.
Rakon Ltd., 8 Sylvia Park Rd., Mt. Wellington, Auckland 1060, New Zealand; (64) 9-573-5554, www.rakon.com
GaN-on-SiC Devices Meet Space Requirements
High-power gallium-nitride-on-silicon-carbide (GaN-on-SiC) power transistors have been qualified through extensive testing to comply with NASA’s reliability standards for satellite and space systems. The compliance applies to discrete devices as well as GaN monolithic microwave integrated circuits (MMICs). Through testing by KCB Solutions, an AS9100-certified facility with experience in Class-S and Class-K requirements, the GaN-on-SiC devices were found to meet NASA EEE-INST-002 Level 1 reliability and performance standards derived from military-grade Class C and Class K qualifications. In particular, testing was performed on GaN-on-SiC model CGH40025F and GaN model CMPA801B025F devices based on the company’s 0.4-µm G28V3 semiconductor process. Model CGH40025F is a +28-V dc high-electron-mobility transistor (HEMT) capable of 25 W peak output power from DC to 6 GHz. Model CMPA801B025F is a +28-V dc GaN HEMT power amplifier capable of 25 W peak output power from 8 to 11 GHz. Both devices met or exceeded specified performance levels after all testing, including exposure to radiation exceeding 1 Mrad.
Wolfspeed, a Cree Co., (866) 924-3645, (919) 287-7888, www.wolfspeed.com
Monolithic Amplifier Drives 50 MHz to 6 GHz
Model PHA-1H+ is a wideband monolithic amplifier for use from 50 MHz to 6 GHz. The RoHS-compliant amplifier is matched to 50Ω, with typical small-signal gain of 13.8 dB at 2 GHz and typical output third-order intercept point of +40.4 dBm at 2.4 GHz. The enhanced-pseudomorphic-high-electron-mobility-transistor (e-PHEMT) amplifier achieves typical noise figure of 2.6 dB to 4 GHz and 3.4 dB to 6 GHz and is supplied in a SOT-89 housing.
Mini-Circuits, P.O. Box 350166, Brooklyn, NY 11235-003; (718) 934-4500, www.minicircuits.com
Isolators Handle 50 to 220 GHz
The MFXXXX-series of millimeter-wave isolators are smaller than Faraday isolators while still providing full waveguide-band frequency coverage. The isolators incorporate input and output ports at 11.2-deg. orientation, with excellent impedance matching. With models operating over six waveguide bands from 50 to 220 GHz, these compact isolators feature typical VSWR of 1.30:1 and no higher than 1.40:1. The isolators are available in electric-to-magnetic (E-to-H) plane, as well as E-to-E plane configurations.
Microwave Resources, Inc., 14250 Central Ave., Ste. D, Chino CA 91710; (909) 627-4125; e-mail: [email protected], www.microwaveresourcesinc.com
Wideband PLL Stabilizes 20 MHz to 9.8 GHz
Model LMX2592 is a low-noise, wideband phase-locked-loop (PLL) frequency synthesizer with integrated voltage-controlled oscillator (VCO) capable of a frequency range of 20 MHz to 9.8 GHz. It supports both fractional-N and integer-N modes, with a 32-b fractional divider allowing fine frequency selection. The PLL achieves integrated noise of 49 fs for 6 GHz output and phase noise of -134.5 dBc/Hz offset 10 MHz from a 6-GHz carrier. The device features a great deal of control, including programmable phase adjustment and programmable charge-pump current. It works with input clock frequencies to 1.4 GHz and operates on a single +3.3-V dc supply. It can be used with two differential outputs, as well as single-ended outputs.
Texas Instruments, P.O. Box 655303, Dallas, TX 75265; www.ti.com