CISSOID’s offering of 3-phase silicon carbide (SiC) MOSFET Intelligent Power Module (IPM) products have grown with the introduction of new liquid-cooled modules for E-mobility tailored for lower switching losses or for higher power. The company is also launching a module based on a lightweight AlSiC flat baseplate that meets the demand for natural convection or forced cooling in aerospace and in dedicated industrial applications. These products integrate a 3-phase SiC MOSFET module with a powerful gate driver.
These new IPMs leverage a technology platform that can be rapidly adapted to new voltage, power, and cooling requirements. They greatly accelerate the design of SiC-based power converters enabling high efficiency and power density. The embedded gate driver solves multiple challenges related to fast-switching SiC transistors: negative drive and active Miller clamping (AMC) prevent parasitic turn-on; desaturation detection and soft shutdown (SSD) react rapidly but safely to short-circuit events; and undervoltage lockout (UVLO) functions on gate driver and DC bus voltages to monitor the proper operation of the system.
Two new liquid-cooled power modules based on a pin fin baseplate are rated for 1200-V blocking voltages and for 340-A to 550-A maximum continuous current. On resistance ranges from 2.53 mΩ to 4.19 mΩ depending on current rating. The total switching energies are as low as 7.48 mJ (Eon) and 7.39 mJ (Eoff) at 600 V/300 A. The co-design of the power module and the gate driver enables optimizing the IPMs for lowest switching energies by carefully tuning dV/dt and controlling voltage overshoots inherent to fast switching. The reverse-bias safe operating area (RBSOA) authorizes peak currents up to 600 A with DC bus voltages up to 880 V, making the power modules perfectly safe for 800-V battery applications.
The new-air cooled module is designed for applications where liquid cooling is not an option, such as aerospace electromechanical actuators and power converters. This module is rated for a blocking voltage of 1200 V and a maximum continuous current of 340 A. On resistance is equal to 3.25 mΩ. Turn-on and turn-off switching energies are 8.42 mJ and 7.05 mJ, respectively, at 600 V and 300 A. The power module is cooled down through an AlSiC flat baseplate. The module is rated for a junction temperature of 175°C and the gate driver for 125°C ambient temperature.