By employing a unique technique that increases device transconductance, this differential, integrated CMOS LNA offers improved gain and noise-figure performance at millimeter-wave frequencies.
A PIN-diode attenuator module was designed and fabricated for wide dynamic range over a broad frequency range and in a small package size, nominally for cable and satellite television applications.
These DC-biased mixers and detectors can be used as the basis for high-speed or UWB millimeter-wave receivers and transmitters through 110 GHz.
By developing a low-noise frequency synthesizer at 2 GHz and applying a pair of doublers, it is possible to achieve low-phase-noise outputs past 8 GHz for digital microwave radios.
The goal of this amplifier design was to maintain noise figure below 1 dB while achieving high gain and a robust output third-order intercept point for base-station applications at 3.5 GHz.
An expression has been developed that relates approximately the phase-noise performances of a pair of VCOs based on similar technology to the tuning bandwidths of the oscillators.
By combining mode-coupling methods with slow-wave transmission-line structures, these VCOs achieve both optimized and wide tuning ranges with low phase noise comparable to low-Q sources.
By using a well-known device model, and taking into account the limitations of on-chip passive elements, a two-stage LNA was designed with excellent mm-wave performance.
These four unconventional PLL configurations may be unfamiliar to many high-frequency engineers, but they can add a great deal of flexibility to a synthesizer bag of design tricks.