Shown is a GaN wafer from TriQuint The firm recently won a DARPA contract to minimize device and amplifier sizes by reducing thermal hot spots in GaN circuits at the near junction of the IC
Power Amplifier Drives 2.9 To 3.1 GHz
Oscillator Locks Onto 1030 MHz
Module Supports ISM Front Ends
Switch Channels 14.4 to 15.4 GHz
VCO Tunes From 1210 To 1230 MHz