Type N Connectors Fit Low-Loss Cables
A line of Type N connectors has been redesigned and optimized for use with LMR-400 coaxial cables. The connectors, which have nominal impedance of 50 Ω and low return loss from DC to 6 GHz, provide a good match with the low-loss cables, which offer a bonded foil construction with excellent shielding capabilities. The Type N connectors are available in straight jack, bulkhead jack, straight plug, and right-angle plug configurations, all with crimp termination for quick assembly to the cables.
Fixed Attenuators Pad DC to 6 GHz
A pair of fixed 50-Ω attenuators each handles input power signals as large as 50 W from DC to 6 GHz. Model 50FHC-xxx-25-6 is the lower-power unit, rated for 25 W, while model 50FHXC-xxx-50-6 is rated at 50 W continuous power and 1 kW peak power. Both attenuators are available with attenuation values from 1 to 40 dB in 1-dB increments. It has worst-case attenuation accuracy of ±1 dB at the highest frequencies and attenuation values through 30 dB and accuracy of ±2 dB or better at the highest frequencies and attenuation values through 40 dB. The maximum VSWR for either attenuator is 1.50:1. The attenuators are available with 4.1/9.5, 4.3/10, 7/16, Type N, SMA, or TNC connectors.
PLL Synthesizer is Resurrected
The ML145170 single-chip phase/frequency detector with serial interface is now available with full support from Lansdale Semiconductor. The frequency synthesizer integrated circuit (IC) can be used with input signals from 5 to 80 MHz or from 25 to 185 MHz, depending on input signal levels, to generate stabilized outputs. Originally designed and built by Motorola/Freescale Semiconductor, it features an easy-to-program architecture. Due to the patented BitGrabber registers, no address/steering bits are required for random access of the three registers. As a result, tuning can be accomplished via a 2-Byte serial transfer to the 16-b N register. The synthesizer IC is available in a choice of dual-in-line-package (DIP) and surface-mount-technology (SMT) packages, including DIP-16, SO16, and TSSOP-16 packages.
DC-to-43.5 GHz Attenuator Die Provide Precise Values to 30 dB
The KAT-D-series attenuators are available with fixed attenuation values of 0 to 10 dB in 1-dB steps as well as 12, 15, 20, and 30 dB. These broadband components feature an ultra-wide frequency range of DC to 43.5 GHz. They are supplied in die form with a single, contiguous ground-plane for easy installation into customer hybrids. The MMIC attenuators are fabricated with thin-film resistors on GaAs substrates, using through-wafer vias for low thermal resistance and stable attenuation with temperature. They handle power levels to 2 W (+33 dBm) with low VSWRs and are well suited for applications in radar and wireless communications systems, including 5G. The absorptive attenuators provide high attenuation accuracy with frequency, typically within ±0.1 dB from DC to 26.5 GHz for the lowest attenuation values and ±1.0 dB or better from 26.5 to 43.5 GHz for the 30-dB attenuator. The attenuator die measure 700 × 750 μm and have an operating-temperature range of -40 to +85ºC.
225-to-400-MHz Amp Protected from ESD
A broadband amplifier provides 17-dB gain from 225 to 400 MHz with +34.5 dBm minimum saturated output power. The amplifier features built-in electrostatic-discharge (ESD) protection, with a minimum threshold detection level of -2 dB and better than 150 us switching speed. The unconditionally stable amplifier has 5-dB noise figure and handles input power levels to +10 dBm. It is supplied with Type N female input and output connectors and has an operating temperature range of -20 to +71oC. It runs on single positive bias of +11.5 to +15.0 V dc.
Tuning Control Switch Adjusts 4G Antenna
The UltraCMOS PE613010 single-pole, single-throw (SPST) tuning control switch was recently selected in bare-die form by Monarch Antenna for a tunable (700-to-800-MHz) 4G smart antenna design. The open-reflective switch operates with low-voltage CMOS control from 100 to 3000 MHz and exhibits low insertion loss of 0.2 dB at 900 MHz and 0.4 dB at 1900 MHz. It handles power levels to +38 dBm and features low on resistance of 1.2 Ω. The switch, which has high ESD tolerance, runs on supplies of +2.3 to +4.8 V dc.
L-Band Transistor Delivers 500 W Power
The QPD1003 is an L-band internally matched field-effect transistor (IMFET) from Qorvo is now available from stocking distributor RFMW, Ltd. It provides 500 W output power at 3-dB compression (P3dB) for L-band communications or radar systems from 1200 to 1400 MHz. The GaN power transistor achieves 65% power-added efficiency (PAE) with 20-dB small-signal gain across the bandwidth. It operates on a +50-V dc supply and is supplied in a flange-mount package with input and output ports matched to 50 Ω.