LDMOS Power Transistors Drive 200 W to 1300 MHz (.PDF Download)

Power transistors for RF/microwave applications exploit a range of different technologies, including substrate materials like the tried-and-true gallium arsenide (GaAs) to the somewhat more recent and intriguing gallium nitride (GaN). Still, silicon transistor substrates remain the longest-running foundations for high-power RF/microwave transistors in both commercial and military applications.

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