Exploring The Promise of GaN-on-Si

Research is evaluating the possibility of growing GaN semiconductor materials on silicon as well as silicon-carbide (SiC) base materials.

Another organization attempting to drive down the cost of GaN semiconductor materials is the Singapore Agency for Science, Technology, and Research as part of its GaN-on-Si Programme. One of the goals of this project is to explore the major technology and cost limitations for manufacturing GaN wafers, and to evaluate the challenges in growing defect-free GaN on lower-cost silicon substrates due to mismatches, lattice issues, and thermal mismatches.

The research program seeks to combine the high-performance characteristics of GaN with the more economical manufacturing economies of silicon in two key areas: in power and in RF/microwave applications. It will also evaluate other materials, including sapphire and silicon carbide (SiC), as potential base materials for GaN semiconductor devices.

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