These digital step attenuators operate from 1 to 6000 MHz with 0.25-dB steps in versions with maximum attenuation values of 30, 60, and 90 dB.
This compact low-noise amplifier provides excellent noise figure from 700 to 3800 MHz.
This latest version of a powerful EM simulator features new solver technology and a streamlined new GUI.
Thermal management in high-frequency circuits depends on careful choice of circuit and packaging materials to remove heat and preserve high performance levels.
From competing wireless power standards to the latest in Wi-Fi and ZigBee, the industry is pushing specifications forward to meet future technology and product needs.
These real-time spectrum analyzers are available with frequency ranges extending to 50 GHz and analysis bandwidths as wide as 160 MHz.
Research is evaluating the possibility of growing GaN semiconductor materials on silicon as well as silicon-carbide (SiC) base materials.
The cost of GaN semiconductor materials can be dramatically reduced if GaN can be grown on silicon base substrates.
A pair of miniature power amplifiers use GaN technology for low distortion in CATV applications.
The cost of GaN power semiconductor materials is expected to drop rapidly over the next six years, according to a detailed market study.