GaN-on-SiC HEMT Integra Technologies
This GaN-on-SiC HEMT delivers 120 W pulsed output power at 1,030 and 1,090 MHz for IFF avionics systems.

GaN-on-SiC Transistor Powers IFF Systems

A GaN-on-SiC HEMT provides 120-W pulsed output power at 1,030 and 1,090 MHz for IFF avionics systems.

Solid-state power is steadily increasing at higher frequencies, enabling greater mobility and portability in electronic defense systems. As an example, Integra Technologies recently added to its portfolio of solid-state devices with its 120-W model IGN1011L120 high-electron-mobility transistor (HEMT) for L-band identify-friend-or-foe (IFF) avionics systems at 1,030 and 1,090 MHz. The gold-metalized, depletion-mode device, which is specified for use under Class AB linear biasing conditions, is supplied in a metal package with ceramic-epoxy lid measuring 1.340 × 0.385 in. (34.04 × 9.78 mm).

The rugged L-band GaN-on-SiC transistor delivers 120 W peak output power with typical power gain of 16.5 dB. Its typical drain efficiency of 75% supports the mobility and portability needed for IFF applications; it incorporates internal impedance prematching and requires a negative gate voltage and bias sequencing during normal operation. The transistor draws 160 mA quiescent drain current from a 50-V dc supply under Mode S pulsed conditions, with 6.4% duty factor (32 µs on and 18 µs off). The robust transistor is assembled via chip-and-wire technology.

To show that even more output power was possible by housing this semiconductor technology in a slightly larger package, the firm developed the model IGN1011L1200 GaN-on-SiC HEMT for 1,030-to-1,090 MHz IFF applications, with 1,200 W pulsed output power and about 17-dB gain at 1,030 and 1,090 MHz.

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish