Cree Teams With RFHIC For GaN

Cree has signed a definitive agreement with RFHIC Corp. of Suwon, Korea to supply GaN-on-silicon-carbide transistors for RFHIC's GaN HEMT amplifier products. According to Dr. Cengiz Balkas, Vice President and General Manager of Cree's Power and RF Business unit, "This important relationship is designed to allow both Cree and RFHIC to expand their market presence and accelerate the insertion of GaN HEMT technology into a number of key volume applications." Jim Milligan, Director of RF and Microwave Products at Cree, added that "The combination of Cree's and RFHIC's core strengths can accelerate GaN HEMT market penetration in cellular infrastructure, two-way communication, CATV amplifier, and a variety of other emerging market segments."

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