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GaN HEMTs Shoot For Less Heat

Power gallium-nitride (GaN) transistor supplier Nitronex has announced its latest generation transistor technology, designed for enhanced thermal performance. The transistor platform features low thermal resistance, such as a temperature rise of a mere 1.4 degrees Centigrade per watt of dissipated power for the model NPT1010 transistor, a device capable of 60 W output power from 500 to 1000 MHz with 14-dB power gain at 55-percent drain efficiency. The enhanced thermal performance results in improved stability at high output-power levels in a wide range of military applications, including communications, jammers, and radar systems.

As Ray Crampton, Vice President of Engineering at Nitronex, notes: "We focused our efforts on reducing thermal rise and developed a complete plan to attack all the key factors: FET design, die thickness, die attach methods and package materials. By combining improvements from several areas, we achieved a 22-percent improvement in thermals compared to our last-generation products." The NPT1010 is RoHS compliant and compatible with lead-free solder processes. It is available in a ceramic air cavity package in bolt-down and pill versions.

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