RF Power Transistor Targets LDMOS Base Stations

NXP Semiconductors recently introduced the BLC7G22L(S)-130 base station power transistor optimized for high power use and Doherty amplifier applications. This is the first of its products to feature the company's Gen7 LDMOS technology.

Power demands on the wireless network infrastructure are increasing as mobile operators begin offering ultra-fast services based on technologies such as HSDPA and LTE. NXP claims its seventh-generation LDMOS technology increases power density by 20 percent and improves power efficiency by two percent, while reducing the thermal resistance Rth by more than 25 percent compared to its previous generation.

The Gen7 LDMOS performs at up to 3.8 GHz and offers 25 percent lower output capacitance, enabling wideband output matching and consequently simplified, better performing Doherty amplifier designs.

Prototypes of the power transistor will be demonstrated at the IEEE MTT-S International Microwave Symposium in Atlanta, Georgia.

Engineering samples of the BLC7G22L(S)-130 will be available in the third quarter of 2008. Additional products based on NXP Gen7 LDMOS technology will be released in 2009.

Information on NXP's Gen7 LDMOS technology is available at www.rfpower.nl/cdrom.

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