Microchip Technology, through its Microsemi subsidiary, now offers the MMA052PP45 gallium-arsenide (GaAs) monolithic-microwave-integrated-circuit (MMIC) pseudomorphic high-electron-mobility-transistor (pHEMT) distributed power amplifier (PA) (see figure). This self-biased device handles a frequency range of dc to 24 GHz, providing 14 dB of gain with a positive slope.
The MMA052PP45 distributed amplifier operates from dc to 24 GHz.
At 10 GHz, the MMA052PP45 achieves a noise figure of 3.5 dB. At the same frequency, its output power at 3-dB compression is +27 dBm with a typical output third-order intercept point (OIP3) of +35 dBm. The amplifier, a self-biased device with 16 selectable drain current states, comes in a 4.5- × 4.5-mm quad-flat no-leads (QFN) package. Input and output ports are both matched to 50 Ω. The MMA052PP45 is well-suited for test-and-measurement, wideband aerospace and defense, and high-linearity microwave radio applications.
Since the MMA052PP45 has a positive gain slope, it can help system designers compensate for high-frequency loss from passive components, as well as other amplifiers with a negative gain slope. The MMA052PP45 was demonstrated at IMS 2019, which gave visitors an opportunity to see it in action.