GaN Device Drives 100 W At 1 GHz

GaN Device Drives 100 W At 1 GHz

A packaged GaN HEMT device generates 100 W output power from 100 MHz to 1 GHz under pulsed or CW conditions.

Specified for Class AB operation, model IGN0110UM100 from Integra Technologies is a dual-lead packaged gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) device capable of at least 100 W continuous-wave (CW) output power from 100 MHz to 1 GHz. It provides 12-dB gain over that range and under those conditions, and can also drive high output-power levels with pulsed signals. It maintains excellent spectral purity into all phases at load mismatches as severe as a 3.0:1 VSWR. All devices are 100% screened using large-signal parameters in a broadband precision test fixture.

Integra Technologies, Inc., 321 Coral Circle, El Segundo, CA 90245; (310) 606-0855, FAX: (310) 606-0865, e-mail: [email protected],

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