Future Directions for Gallium Nitride (GaN) Devices in RF Applications

This webinar was originally held on February 2nd, 2024, and is now available for on demand viewing.

Duration: 1 hour 

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Summary

Size, weight, power, and cost (SWaP-C) are critical design constraints in all manner of systems in avionics, radar, electronic warfare, and communications infrastructure. Gallium nitride (GaN) devices have supplanted silicon LDMOS and Gallium Arsenide (GaAs) devices in many such RF amplification applications in these systems thanks to their greater power density, improved efficiency, and lower cost.

When considering GaN devices in high-power system or sub-system design, engineers need to ponder such questions as:

· How might SWaP-C constraints make GaN devices essential for my project, and what are some key elements in that decision?
· What are some of the cutting-edge system designs that are making the best use of GaN devices, and why do they work so well in those applications?
· What are some of the enabling technologies that will make GaN devices even more desirable in high-power RF applications, such as improved thermal characteristics?

In addition to these topics, we’ll discuss the future of GaN device design and integration, with both public and private funds continuing to fuel the evolution of GaN performance.

This webinar, the first in our 2024 series of events with members of Microwaves & RF’s Editorial Advisory Board or their representatives, will examine future technology trends in wide-bandgap devices in RF amplifiers, considering technology drivers and the changing requirements of RF design and test engineers.