Gallium nitride (GaN) continues to reach new milestones as a leading semiconductor technology. As a replacement for silicon carbide (SiC) on diamond, for instance, Raytheon’s GaN-on-diamond devices reportedly boasted three to five times’ higher t...
A SiGe BiCMOS amplifier provides high gain from 20 MHz to 2 GHz.
An active mixer provides conversion gain from 300 MHz to 6 GHz.
A leading supplier of GaN technology explains how these high-power devices serve counter-IED applications.
Certified products are now available from the Wi-SUN Alliance, an association of companies working together to facilitate wireless smart-utility and energy-management products based on the open IEEE 802.15.4g standard. Certification has been...
This E-band MMIC power detector converts millimeter-wave signals to voltages.
A broadband GaN amplifier achieves excellent thermal resistance to minimize heat buildup in a plastic package.
A line of GaN-on-SiC HEMT power transistors provides different output levels from DC to 18 GHz.