Three different semiconductor processes, based on the use of GaAs, InP, and GaN HEMT devices, were compared for their suitability as microwave switches.
This pair of digital signal processors flaunts the industrys lowest power consumption while nurturing product differentiation and functionality.
These highly integrated circuits can help fortify the design of a tunable oscillator by providing isolation from output-power variations as a function of supply and temperature.
Compact antenna designs with good isolation provide improved efficiency when employed internally in handheld and portable wireless systems.
Multilayer technology yields a 3-dB coupler for applications in which wide instantaneous bandwidth, small size, and light weight are critical.