Gallium-nitride (GaN) technology has been rapidly growing as the material of choice for HEMT devices in the RF/microwave industry due to its high-efficiency operation and its specific properties being ideal for high-frequency and high-power applications. GaN technology has also proven applicable for high-frequency, low-noise receiver circuitry. More recent processes in GaN transistor development have used shorter gate lengths to address increasing opportunities for use in designs at 10 GHz
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