Equipment designers often face power-level requirements that far exceed what is achievable from a single solid-state device. While laterally diffused metal-oxide semiconductor (LDMOS) devices offer ever-higher power levels, gallium-nitride (GaN) technology takes it one step further: GaN brings higher power densities and efficiencies to the designer’s toolbox, making it possible to achieve even more power in smaller packages while reducing the overall size of the final solution.
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