Single-Ended GaN Power Transistors Spawn New System-Level Capabilities (.PDF Download)

Equipment designers often face power-level requirements that far exceed what is achievable from a single solid-state device. While laterally diffused metal-oxide semiconductor (LDMOS) devices offer ever-higher power levels, gallium-nitride (GaN) technology takes it one step further: GaN brings higher power densities and efficiencies to the designer’s toolbox, making it possible to achieve even more power in smaller packages while reducing the overall size of the final solution.

Register to view the full article

Register to view the full article. By registering for Microwaves & RF now, you'll not only gain access to premium content, you'll also become part of an exclusive, robust global engineering community!
Participate in Expert and Reader driven Q&A's
Start your own conversation by commenting on any article or blog
Download high-quality content including the highly anticipated Salary & Career Report

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish