Pursuing GaN Growth On Silicon

The cost of GaN semiconductor materials can be dramatically reduced if GaN can be grown on silicon base substrates.

The Cambridge Centre for Gallium Nitride in Cambridge, UK is exploring a number of different uses for GaN semiconductor materials. In addition to power RF/microwave transistors and amplifiers, the group is also targeting light-emitting diodes (LEDs) for optical and lighting applications. The organization’s researchers are hoping to overcome some of the challenges in growing GaN on silicon substrates, so as to maintain the excellent optical and power RF properties of GaN while also dramatically dropping the cost of GaN semiconductor materials. To learn more about the GaN-based pursuits of the Cambridge Centre for Gallium Nitride, click here.

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