Mwrf 5250 Ims Nxp Promo
Mwrf 5250 Ims Nxp Promo
Mwrf 5250 Ims Nxp Promo
Mwrf 5250 Ims Nxp Promo
Mwrf 5250 Ims Nxp Promo

GaN Generates Power on IMS Exhibition Floor

June 5, 2017
GaN has become the semiconductor material of choice for solid-state, high-power applications from RF through millimeter-wave frequencies.

Gallium nitride (GaN) is now the semiconductor substrate material of choice for high-power-density transistors and monolithic microwave integrated circuits (MMICs). It comes as no surprise, then, that the 2017 IMS exhibition will feature a healthy cross-section of GaN-based semiconductors from leading suppliers. MACOM Technology Solutions, at booth No. 1312, will show the highly regarded Nitronex NPT1010B GaN-on-silicon +28-V dc power transistor with capability of 100 W CW output power at 900 MHz for wireless base stations.

GaN semiconductor technology offers high output power at RF through millimeter-wave frequencies. (Courtesy of NXP)

In addition to a full complement of GaN devices on display at NXP Semiconductors’ booth No. 1132 (see figure), representatives will offer technical presentations on the current state of GaN-based MMICs and how GaN power-transistor technology compares to other high-frequency semiconductor technologies, including gallium arsenide (GaAs) and silicon germanium (SiGe). In addition, a presentation during a morning session on amplifiers will feature the design of a two-stage Doherty amplifier with 4G and 5G wireless network base stations.

Additional suppliers of GaN devices present on the 2017 IMS exhibition floor include Infineon with its GaN-on-SiC technology (booth No. 1214), Microsemi (booth No. 810), and Sumitomo Electric Device Innovations (booth No. 1239).

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