Exploring The Promise of GaN-on-Si

March 27, 2013
Research is evaluating the possibility of growing GaN semiconductor materials on silicon as well as silicon-carbide (SiC) base materials.

Another organization attempting to drive down the cost of GaN semiconductor materials is the Singapore Agency for Science, Technology, and Research as part of its GaN-on-Si Programme. One of the goals of this project is to explore the major technology and cost limitations for manufacturing GaN wafers, and to evaluate the challenges in growing defect-free GaN on lower-cost silicon substrates due to mismatches, lattice issues, and thermal mismatches.

The research program seeks to combine the high-performance characteristics of GaN with the more economical manufacturing economies of silicon in two key areas: in power and in RF/microwave applications. It will also evaluate other materials, including sapphire and silicon carbide (SiC), as potential base materials for GaN semiconductor devices.

Sponsored Recommendations

Microelectromechanical 3D Printing Resources

March 28, 2024
Check out our curated list of microelectromechanical 3D printing resources and see how PµSL technology offers freedom and speed.

Understanding 3D Printing Tolerances: A Guide to Achieving Precision in Additive Manufacturing

March 28, 2024
In the world of additive manufacturing, precision is paramount. One crucial aspect of ensuring precision in 3D printing is understanding tolerances. In this article, we’ll explore...

Making the Case for Micro-Precision 3D Printing

March 28, 2024
Read this white paper to learn how micro-precision 3D printing can provide the flexibility of additive manufacturing at a micro scale.

125 GHz Frequency Doubler using a Waveguide Cavity Produced by Stereolithography

March 28, 2024
Read this technical paper to learn how a 125 GHz frequency doubler using a waveguide cavity was produced by stereolithography.