GaN Avionics Transistor Delivers 1200 W at L-Band

The 2016 IMS exhibition floor provides an opportunity to assess the current state of the art in many different high-frequency technologies, including high-power semiconductors, such as gallium nitride (GaN) pulsed transistors. Claiming the highest power in the industry, Integra Technologies Inc. is showing its model IGN1011L1200 pulsed transistor for ELM Mode S avionics applications at IMS Exhibition Booth 850. Based on second-generation gallium-nitride-on-silicon-carbide (GaN-on-SiC) semiconductor technology, the Class AB high electron mobility transistor (HEMT) is capable of 1200 W output power and 17 dB gain from 1030 to 1090 MHz when fed with a typical input power level of 25 W. The GaN power transistor operates at +50-V dc with 75% typical drain efficiency and is supplied in a rugged metal-ceramic package. The depletion-mode device requires negative gate voltage and bias sequencing.