MACOM (Booth 2839) will feature many high-power devices and amplifiers, including examples that incorporate its own GaN-on-SiC semiconductor technology. Visitors to the booth can learn more about the models MAGX-000912-650L00 and MAGX-000912-650L0S GaN-on-SiC power transistors in standard flange or earless flange packaging, respectively. Developed for pulsed L-band avionics systems, these depletion-mode power transistors provide 650-W output power from 960 to 1215 MHz. The internally matched devices achieve typical gain of 20 dB with 62% drain efficiency. The +50-V dc transistors are rated for a mean time to failure (MTTF) of more than 600 years, even when subjected to extremely mismatched conditions. These transistors will find homes in civilian and military pulsed avionics systems, including Mode-S, TCAS, JTIDS, DME, and TACAN systems.