Gallium-nitride (GaN) power semiconductor technology has helped significantly improve performance levels in RF/microwave power amplification. By reducing device parasitic elements and using shorter gate lengths, and using higher operating voltages, GaN transistors have reached higher output-power densities, wider bandwidths, and improved dc-to-RF efficiencies...
Register to view the full article
Register to view the full article. By registering for Microwaves & RF now, you'll not only gain access to premium content, you'll also become part of an exclusive, robust global engineering community!
Participate in Expert and Reader driven Q&A's
Start your own conversation by commenting on any article or blog
Download high-quality content including the highly anticipated Salary & Career Report