Low-noise amplifiers (LNAs) are essential for receiving low-level communications signals, although such amplifiers are typically not broadband in their frequency coverage. However, an innovative LNA design approach blends low- and high-frequency circuit design techniques to achieve low noise from dc to 17 GHz. The amplifier, based on enhancement-mode, pseudomorphic high-electron-mobility-transistor (E-pHEMT) semiconductor technology, achieves low 1/f noise with low harmonic distortion and rel
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