Solid-state power amplifiers (PAs) continually push the boundaries on power density in ever-smaller package sizes. Though that’s desirable from a cost, size, and weight perspective, the thermal energy for gallium-nitride (GaN)-based devices operating at high power levels is magnitudes greater than prior technologies. Such thermal-energy density in and around these devices significantly strains the transistors and surrounding components. Therefore, to get the most out of these new materi
Register to view the full article
By registering on Microwaves & RF now, you'll not only gain access to Wideband Mixer Integrates Programmable IF Amplifiers (.PDF Download), you'll also become part of the RF engineering community. Plus as a bonus you’ll get to a complimentary copy of The Top 5 RF Essentials compendium (PDF download) when you register now.
Joining the Microwaves & RF community also allows you to:
• Become a member of a group of exclusive RF Engineers.
• Start your own conversation by commenting on any article or blog
• Communicate and network with other Engineers from all over the world
• Gain access to download high quality content including schematics and diagrams where applicable.
Already a member? Log in.