GaN Transistors Fit Into Plastic

GaN Transistors Fit Into Plastic

Among the many gallium nitride (GaN) devices on display at the Cree RF booth (No. 433) at the 2014 IMS will be a family of high-electron-mobility-transistor (HEMT) devices in dual-flat-no-lead (DFN) plastic packages. Suitable for use at power levels under 100 W, these transistors are aimed at applications at S-, C-, and X-band frequencies, including commercial radar systems and wireless data links. In addition to its GaN semiconductor devices in the IMS Exhibition, Cree RF will be participating in the IMS 2014 STEM Program, which introduces a group of about 50 students to RF/microwave technology with a goal of fostering possible careers for them in this industry. Cree RF is also playing a major part in the 15th annual IEEE Wireless and Microwave Technology Conference (WAMICON) on Friday, June 6th, with Cree’s strategic business development manager, Ray Pengelly, serving as WAMICON conference chair.

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish