A line of GaAs pseudomorphic-high-electron-mobility-transistor (PHEMT) integrated-circuit (IC) power amplifiers provide high output levels from 0.8 to 9.5 GHz. Suitable for commercial and military communications, radar, and test applications, the amplifiers are internally matched to 50 Ω and rated for operation from -55 to +85°C. They offer gain levels of 19 to 30 dB with gain flatness of ±2.0 dB or better and output power at 1-dB compression from +36.5 to +38.5 dBm. The output third-order intercept (OIP3) levels range from +38.5 to +47.0 dBm. They are supplied in modules with mounting holes in aluminum enclosures that simplify installation. As an example, model PE15A5004 operates from 0.8 to 2.2 GHz with 30-dB small-signal gain and ±1.5 dB gain flatness. It achieves +38-dBm output power at 1-dB compression and OIP3 of +38.5 dBm with 10-dB noise figure and 19-dB input return loss.
Pasternack Enterprises, Inc., 17802 Fitch, Irvine, CA 92614; (866) 727-8376, (949) 261-1920, FAX: (949) 261-7451