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February 2009 [Test & Measurement] Pulsed Test Systems Characterize Power FETs Power levels are increasing in RF/microwave transistors, presenting new opportunities for amplifier designers, and new challenges for those who must characterize these devices. Newer wide-bandgap (WBG) semiconductor devices are achieving impressive levels of power density, but generating large amounts of heat in the process. The heat poses problems when making measurements on these high-output transistors, since elevated temperatures can modify device behavior. Fortunately, pulsed DC and... |
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