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March 2009 [Devices & ICs] Recalling Early GaAs MMIC Developments Gallium arsenide (GaAs) is a well-established device technology now at the heart of many commercial and military systems. The technology is now more than 40 years old, with early diffused-gate transistors with lower-Megahertz gains reported over four decades earlier.1 Those earlier research efforts resulted in a significant leap forward in 1971 when GaAs transistors with 1-µm gate lengths (Fig.... February 2009 [Computer-Aided Engineering] Tracking Advances In High-Power GaN HEMTs Improvements in solid-state power amplifiers depend on advances in transistors. Fortunately, evolving gallium nitride (GaN) high-electron-mobility-transistor (HEMT) technology is bringing many benefits to high-frequency amplifier designers. A key advantage of GaN HEMT devices over other transistor technologies is the high power density possible from relatively small transistor cells. For example, HEMT devices from Cree are capable... |
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