Author - Carl Platis

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Carl Platis	Write for Microwaves & RF

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February 2009 [Computer-Aided Engineering]
Tracking Advances In High-Power GaN HEMTs
Improvements in solid-state power amplifiers depend on advances in transistors. Fortunately, evolving gallium nitride (GaN) high-electron-mobility-transistor (HEMT) technology is bringing many benefits to high-frequency amplifier designers. A key advantage of GaN HEMT devices over other transistor technologies is the high power density possible from relatively small transistor cells. For example, HEMT devices from Cree are capable...