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February [Components] GaN Devices Arm Distributed Amplifier Broadband, high-efficiency power amplifiers serve a wide range of military applications in present and future communications and navigation systems. But amplifier designers are limited in performance by the active devices available to them. Fortunately, the growing availability of wide-bandgap semiconductor devices, such as silicon carbide (SiC) and gallium nitride (GaN) transistors, is clearing the way for broadband, high-efficiency power amplifiers... |
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