Author - Frédéric Fernez

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Frédéric Fernez	Write for Microwaves & RF

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September 2005 [Test & Measurement]
Method Measures Device Power And Gain
Power measurements on RF transistors and RF integrated circuits (RF ICs) have grown in complexity as a function of the modulation formats used with these devices. One of the most important measures of high-power device performance is saturated power. Because the parameter is difficult to evaluate with CW techniques, it is often tested under pulsed conditions. The approach presented here eliminates some of the key drawbacks of the typical method employed to make these measurements. It does...