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April 2005 [Components] Design An E-pHEMT 4.9-to-6.0-GHz LNA Low-noise amplifiers (LNAs) are invaluable for increasing the sensitivity and range of a microwave receiver. For applications at 4.9 to 6.0 GHz, which include IEEE 802.11a, HiperLAN2, and HiSWANa wireless-local-area-network (WLAN) receivers, a two-stage design based on enhancement-mode, pseudomorphic high-electron-mobility-transistor (E-pHEMT) device technology delivers 22 dB gain at 5.5 GHz, with a low noise figure of 1.4 dB and +11.5-dBm output power at 1-dB compression. The amplifier... March 2004 [Components] Build An E-pHEMT Low-Noise Amplifier Low-noise amplifiers (LNAs) for high-frequency applications have been based on GaAs metal-epitaxial-semiconductor field-effect-transistor (MESFET) and depletion-mode pseudomorphic-high-electron-mobility-transistor (pHEMT) technologies for some time.... |
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