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February 2009 [Test & Measurement] Pulsed Test Systems Characterize Power FETs Power levels are increasing in RF/microwave transistors, presenting new opportunities for amplifier designers, and new challenges for those who must characterize these devices. Newer wide-bandgap (WBG) semiconductor devices are achieving impressive levels of power density, but generating large amounts of heat in the process. The heat poses problems when making measurements on these high-output transistors, since elevated temperatures can modify device behavior. Fortunately, pulsed DC and... February 2005 [Test & Measurement] Three-Probe Tuner Tackles Multiple Tasks Electromechanical impedance tuners provide the appealing combination of extremely high VSWR (to 200:1) and high power-handling capability (to 400 W CW). Until now, electromechanical slide screw tuners have been built as wideband models (with two probes of different lengths), as high-VSWR systems (with a prematching stage), or as harmonic rejection tuners, although not with all three characteristics at the same time. The MPT Multi-Purpose Tuners from Focus Microwaves (Montreal, Quebec,... January 2004 [Test & Measurement] Load-Pull Tuners Are Frequency Selective Power-amplifier (PA) designers must constantly strive for improved linearity and efficiency to meet the needs of current and emerging communications standards. High-data-rate digital modulation formats require nearly distortion-free performance from... |
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