TriQuint has been a leading developer of GaN device technology since earning a multiyear GaN research development contract in excess of $30 million by the US Defense Advanced Research Projects Agency (DARPA) in 2005. GaN devices provide considerably higher power density at high frequencies than traditional RF/microwave device technologies, such as silicon bipolar transistors and GaAs MESFETs. The higher power densities allow smaller, more efficient amplifiers capable of operating at high system voltages.

According to TriQuint Research and Development Manager, Anthony Balistreri, "IQE’s established track record in providing TriQuint with reliable, high-quality products was a key factor in selecting them to produce and deliver a range of advanced GaN epitaxial materials. We’ve developed a close working relationship with IQE throughout the development phase of our GaN program." Alex Ceruzzi, Vice-President and General Manager of IQE RF, added "We appreciate the trust TriQuint has placed in us to meet their needs." The GaN wafers will be used in ongoing military and commercial research and development efforts while supporting TriQuint’s new product rollouts in 2008.

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TriQuint Semiconductor