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[Computer-Aided Engineering] AWR Adds NXP Large-Signal LDMOS Models Jack Browne | ED Online ID #17272 | October 9, 2007
Applied Wave Research, Inc. [AWR®] has augmented its Microwave Office(R) 2007 design software simulation library with sixth-generation laterally-diffused metal oxide semiconductor (LDMOS) devices from NXP Semiconductor. The power transistors, which are ideal for wireless base-station transmitter power amplifiers, are modeled for use in nonlinear large-signal circuit simulations using the Microwave Office suite of RF/microwave computer-aided-engineering (CAE) simulation tools. The model library includes NXP LDMOS devices designed for WiMAX power amplifiers.
According to Ronald Wilting, International Product Marketing Manager at NXP Semiconductor, "In order to meet the demanding power efficiency and linearity specifications of modern communication systems, the PA design engineer requires accurate device models and fast and efficient simulation tools. NXP has met the technical challenge to develop such models for their silicon RF LDMOS technology and now designers using AWR’s Microwave Office software benefit by also being able to examine the performance of these packaged NXP devices as part of their design flow." For active, licensed customers of AWR’s Microwave Office, the NXP LDMOS process technology simulation library is free. Applied Wave Research (www.appwave.com) NXP Semiconductor (www.nxp.com)
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